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Typical Characteristics T J = 25°C unless otherwise noted
100
80
V GS = 10V
V GS = 4.5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
4.0
3.5
V GS = 3V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
V GS = 4V
3.0
V GS = 3.5V
60
V GS = 3.5V
2.5
40
2.0
1.5
V GS = 4V
20
0
0.0
0.4
0.8
1.2
V GS = 3V
1.6
2.0
1.0
0.5
0
20
40
V GS = 4.5V
60
V GS = 10V
80 100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.8
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
21
1.6
I D = 17.6A
V GS = 10V
18
I D = 17.6A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
1.4
15
1.2
1.0
0.8
0.6
12
9
6
3
T J = 125 o C
T J = 25 o C
-75
-50
-25 0 25 50 75 100 125 150
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
100
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
80
V DS = 5V
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
V GS = 0V
10
60
1
T J = 150 o C
40
T J = 150 o C
0.1
T J = 25 o C
20
T J = 25 o C
T J = -55 o C
0.01
T J = -55 o C
0
1
2
3
4
5
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
3
www.fairchildsemi.com
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